METHOD TESTING THICKNESS OF FILM IN PROCESS OF ITS DEPOSITION Russian patent published in 2000 - IPC

Abstract RU 2157509 C1

FIELD: instrumentation, nondestructive test of thickness of films. SUBSTANCE: invention is related to devices measuring and testing thickness of films of photoresist deposited on rotating semiconductor substrate in process of centrifugation in the course of photolithography operations. In agreement with invention radiation beam with wave length λ is incident on tested substrate at angle ϕ, intensity of reflected radiation is recorded before and in process of deposition of film. In this case moment of finish of process of formation of thickness of photoresist film during centrifugation is determined by termination of change of intensity of reflected radiation in time and film thickness if found by mathematical expression given in description. EFFECT: possibility of test and measurement of thickness of photoresist film in process of its formation by centrifugation and of determination of moment of termination of formation of film thickness. 4 dwg

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RU 2 157 509 C1

Authors

Abramov G.V.

Bitjukov V.K.

Erygin D.V.

Popov G.V.

Dates

2000-10-10Published

1999-03-24Filed