METHOD OF PREPARING SILICON CARBIDE Russian patent published in 2001 - IPC

FIELD: chemical industry, more particularly preparation of abrasive and refractory materials. SUBSTANCE: shungite in graphite crucibles is placed into vacuum furnace, heated to 1600-1800 C at heating rate of 200-300 C/h at residual pressure of 0.25-1.3 kPa, kept at temperature indicated above for 1-2 h, and above-indicated residual pressure remains unchanged. Electric power consumption is 18.4-kWh/1 kg of SiC. Abrasive power of SiC grains is 0.0925 units. Method is simple and efficient. EFFECT: more efficient preparation method. 2 cl, 1 ex