NO-POTENTIAL POWER MODULE OF ENHANCED INSULATING VOLTAGE Russian patent published in 2006 - IPC H01L25/00 

FIELD: power modules for high-voltage converter engineering in various industries, transport, power engineering, and public utilities.

SUBSTANCE: proposed power module that can be built around diodes, thyristors, transistors, and other semiconductor devices has base, leads, case, and cermet board that mounts semiconductor component; arranged in tandem between semiconductor component and base are capacitive voltage divider assembled of minimum two cermet boards interconnected to organize electric circuit set up of minimum two series-connected capacitors and temperature compensator connected through one contacting surface to bottom cermet board and through other one, to module base; dimensions of temperature compensator effective surface follow those of cermet board metal plating contacting this temperature compensator; thickness of the latter should equal at least insulating gap length between edge of bottom board and that of its metal-plated surface.

EFFECT: minimum twice as high insulating voltage between leads and base due to use of internal capacitive voltage divider built around cermet boards.

1 cl, 4 dwg