PROCESS OF MANUFACTURE OF CONTACTS OF INTEGRATED CIRCUITS BASED ON SILICON Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: alloy film containing 20-50 atomic per cent of Co and 80-50 atomic per cent of Ti is applied on to silicon substrate masked with dielectric material with opened contact windows to active regions. Application of film is performed by method of ion-plasma spraying in mixture of inert gas and N₂ with content of N₂ up to 8-20 atomic per cent. Then substrate is annealed together with applied alloy film at temperature 750-900 C for the course of 20-30 min. EFFECT: facilitated manufacture, improved operational characteristics of contacts. 3 dwg, 1 tbl