FIELD: technology for producing semi-penetrable membranes for molecular filtration of gas flows and for division of reaction spaces in chemical reactors.
SUBSTANCE: method for producing gas-penetrable membrane includes two-sided electro-chemical etching of monocrystalline plate made of composition AIIIBV of n conductivity type or of semiconductor AIV with width of forbidden zone E≥1,0 electron volts and alloying level 1017-1020 1/cm3. Modes of aforementioned etching are set, providing for generation of simultaneously porous layers, while etching process is performed until moment of spontaneous stopping of electro-chemical process and generation of solid separating layer of stationary thickness on given part of plate area, determined using sharp bend on the curve of temporal dependence of anode current.
EFFECT: gas membrane, produced in accordance to method, has increased penetrability for molecules of light gases and increased selectivity characteristics at room temperature.
2 cl, 3 dwg, 3 ex
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Authors
Dates
2006-09-20—Published
2005-02-22—Filed