PHOTODIODE MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: semiconductor devices. SUBSTANCE: source materials used for photodiode manufacture are silicon epitaxial structures, type 9-20 KEF (KES) 20-100; parameters used as criteria of photodiode serviceability are dark current that should be below 5•10^-7 A and integral sensitivity that should not change by more than 35% at no operating voltage and 15% at operating voltage of 3 V upon exposure to gamma- neutron radiation within flux range of 10¹³-10₁₄ cm^-2. EFFECT: enhanced resistance to heavy radiation effects.