FIELD: effective high-power injection lasers including single-mode, single-frequency ones. SUBSTANCE: method involves organization of heterostructure with active layer and confining layers abutting against the latter on two sides; confining layers have on each side at least one confining sublayer of maximal optical confinement with different polarity of conductivity. Background dope level is ensured between doped confining sublayers of maximal optical confinement closest to active layer and also in active layer; doped confining sublayers of maximal optical confinement closest to active layer are doped so as to ensure that controlled ratio of hole concentration in p sublayer of maximal optical confinement on p side to electron concentration in n sublayer of maximal optical confinement on n side (p/n ratio) were higher than unity. In the process p/n ratio is varied by selecting hole concentrations between 4•1017cm-3 and 1•1019cm-3 and electron concentrations between 2•1017cm-3 and 2•1018cm-3. Boundaries of p-i-n heterojunction volume charge are provided in doped confining sublayers of maximal optical confinement. Proposed design ensures laser stabilization within definite spectrum range. EFFECT: enhanced operating reliability of laser. 24 cl, 8 dwg, 1 tbl
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Authors
Dates
2001-12-10—Published
2000-08-30—Filed