INJECTION LASER AND LASER DIODE STRIP Russian patent published in 2004 - IPC

FIELD: high-power semiconductor injection lasers and their diode strips. SUBSTANCE: proposed laser has heterostructure with waveguide layers one of whose limiting layers incorporates embossed structures, at least part of mesa strip, and passive areas with bases near limiting layer boundary closest to active area. At least part of base of each passive area is, essentially, embossed structure abutting against mesa strip whose length in direction perpendicular to longitudinal axis of cavity is greater than distance affording dissipation of beam propagating in mentioned direction perpendicular to longitudinal axis of cavity. Each embossed structure has amplitude of at least 0.1 mm and is spaced from mentioned limiting layer boundary through distance not over 0.5 mm. Laser diode strip is built around laser heterostructure with waveguide layers and incorporates alternating sequence of active section and passive area, their bases being disposed in same limiting layer. Proposed design makes it possible to improve spatial output emission pattern and to contract it to single-mode one as well as to improve emission spectrum to single-frequency one. EFFECT: enhanced efficiency and output emissive power of laser. 12 cl, 12 dwg, 2 tbl