FIELD: microelectronics.
SUBSTANCE: invention relates to the field of microelectronics and can be used in the manufacture of transistors on a silicon-on-insulator plate (SOI) with a wide range of applications. The expected result is achieved by the fact that in the manufacture of a transistor with a dependent contact to the substrate, including the formation of drain areas, a source combined with a contact to the substrate, and a gate consisting of two layers of polysilicon on a SOI plate, a dependent contact to the substrate is performed by creating a highly alloyed silicon region, which is connected to the transistor substrate by means of an additional alloyed silicon region.
EFFECT: expanding the scope of application of a transistor with two layers of polysilicon and with a dependent contact to the substrate.
1 cl, 13 dwg
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