MANUFACTURING METHOD OF TRANSISTOR WITH INDEPENDENT CONTACT TO SUBSTRATE Russian patent published in 2020 - IPC H01L29/78 H01L21/20 

FIELD: physics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in manufacture of transistors on the insulating silicon plate (ISP) with a wide field of application. Method of making a transistor with independent contact to substrate includes formation on the silicon plate on the insulator areas of drain, source, gate, consisting of two layers of polysilicon, wherein according to the invention independent contact to the substrate is performed by creating a heavily doped silicon region outside the active region of the transistor, which is connected to the transistor by means of an additional doped silicon region.

EFFECT: invention provides wider field of use of a transistor with two layers of polysilicon, high reliability of the design, exclusion of parasitic capacitance of the gate of the transistor on the ISP with independent contact to the footstep.

1 cl, 9 dwg