FIELD: semiconductor structures; detection of visible-range radiation. SUBSTANCE: photodiode 200 has insulating region 202 that passes light. It also has substrate region 204 of first polarity of conductivity and pocket region 206 of second polarity of conductivity. Pocket 206 is formed in substrate 204 below insulating region 202. Pocket 206 is separated from substrate 204 by first surface 216. Photodiode 200 also has highly doped region 220 of second polarity of conductivity. Highly doped region 220 is formed by insulating region 202 in first position 222. In essence, first surface 216 meets highly doped region 220 in first position 222. In this way dark current is reduced on boundary surface between depleted layer and transparent insulating region. EFFECT: enhanced sensitivity. 22 cl, 9 dwg
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