DEVICES BASED ON SELECTIVELY GROWN EPITAXIAL MATERIALS OF GROUPS III-V Russian patent published in 2018 - IPC H01L21/20 H01L29/78 

FIELD: chemistry.

SUBSTANCE: method of manufacturing a device based on the material of groups III-V includes the steps of forming a groove in an insulating layer on a silicon substrate, the first buffer layer based on groups III-V material on a silicon substrate is applied to the groove, the second buffer layer is applied to the first buffer layer based on the material of groups III-V, the channel layer of the device based on the material of group III-V is applied to the second buffer layer based on material of groups III-V.

EFFECT: invention provides the integration of devices based on the materials of groups III-V of n-type and p-type on a silicon substrate.

18 cl, 16 dwg