METHOD OF PRODUCING SILICON TETRAFLUORIDE Russian patent published in 2002 - IPC

FIELD: inorganic chemistry, particularly, methods of production of metalloid fluorides, more specifically, methods of production of silicon tetrafluoride. SUBSTANCE: method includes holding of initial salt Na₂SiF₆ for 1.5-3 h at temperature of 300-350 C and low pressure decreased down to 5 mm Hg; treatment of reaction mass with fluorine (possibly in mixture with inert gas) for 0.5-1.5 h with supply of fluorine in ratio of Na₂SiF₆:F₂ from 50 to 100; reduction of pressure after discontinuation of fluorine supply; thermal decomposition of Na₂SiF₆ after discontinuation of liberation of gases with simultaneous withdrawal of gaseous silicon tetrafluoride. Realization of proposed method results in obtaining of silicon tetrafluoride up to 99.991 wt.% pure and sodium fluoride up to 99.0 wt.%. Silicon tetrafluoride is used in electronic industry and for imparting water repelling properties to articles, resistance to corrosion and attrition. EFFECT: higher efficiency. 2 cl, 1 dwg, 1 tbl