FIELD: chemistry.
SUBSTANCE: invention can be used in making in electronic industry during production of solar cells. Sodium silicofluoride is pre-dried at temperature of up to 300°C and residual pressure of up to 2 mm Hg. At the first thermal decomposition step, sodium silicofluoride is heated to 620-650°C with constant removal of the released silicon tetrafluoride at residual pressure of up to 30 mm Hg. At the second step the remaining mass is heated to temperature not lower than 750°C, while also constantly removing silicon tetrafluoride at pressure not higher than 30 mm Hg.
EFFECT: invention enables to avoid agglomeration and melting of the reaction mass and obtain pure silicon tetrafluoride with output of over 99%.
2 tbl, 1 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF PRODUCING HIGHLY PURE SILICON TETRAFLUORIDE | 2009 |
|
RU2406694C1 |
METHOD OF HYDROGEN FLUORIDE PURIFICATION | 2013 |
|
RU2534252C1 |
METHOD OF PRODUCING SILICON TETRAFLUORIDE | 2001 |
|
RU2182558C1 |
METHOD AND DEVICE FOR PROCESSING OF SODIUM SILICOFLUORIDE | 2006 |
|
RU2331582C2 |
METHOD OF PRODUCING SILICON TETRAFLUORIDE AND APPARATUS FOR REALISING SAID METHOD | 2010 |
|
RU2454366C2 |
METHOD OF PRODUCING SILICON | 2008 |
|
RU2415809C2 |
METHOD OF PREPARING MONOSILANE | 1995 |
|
RU2077483C1 |
METHOD FOR SEPARATING FLUOR CONTAINING GAS MIXTURES | 2006 |
|
RU2328335C1 |
METHOD FOR PRODUCTION OF HIGH-PURITY POLYCRYSTALLINE SILICON | 1993 |
|
RU2078034C1 |
METHOD OF DISPOSING PRODUCTION WASTE CONTAINING FLUOROSILICATES | 2016 |
|
RU2641819C2 |
Authors
Dates
2010-09-20—Published
2009-02-09—Filed