OSCILLATOR Russian patent published in 2002 - IPC

FIELD: extremely high-frequency diode oscillators. SUBSTANCE: oscillator has waveguide-accommodated structure in the form of two separate planar insulated members. Member coupled with oscillator diode is made in the form of L-shaped two-arm conductor. First arm whose width is smaller than half the waveguide width is positioned in parallel with waveguide axis and its lead is connected to oscillator diode. Second arm is passed orthogonally through slit of waveguide wide wall. Member coupled with varicap is made in the form of U-shaped conductor incorporating series-connected varicap. U-shaped conductor partially covers second arm of L-shaped conductor. In order to additionally extend oscillator frequency band varicap is made in the form of microassembly incorporating even number of diodes connected in series opposition for high frequency and in parallel for dc current. Proposed design provides for matching diode and waveguide impedances within wide range, unifying harmonic generation, and reduced frequency instability due to high Q-factor of resonance-tuned circuit. EFFECT: facilitated tuning procedure, enlarged capabilities of frequency tuning range control. 2 cl, 4 dwg