FIELD: crystal growing. SUBSTANCE: peculiar feature of the method consists in determining parameter of grown crystal with disturbed growth faces of monocrystal, wherein one measures length of cylindrical portion of grown crystal from its origin to the surface where monocrystal growth face is disrupted or interrupted. Length of defectless zone L is found from the following formula: L = kL1, in which L1 is said cylindrical portion and k is correction factor equal to 0.66-0.85. EFFECT: simplified and accelerated determination procedure and increased determination accuracy. 1 dwg, 1 tbl
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