FIELD: gaseous discharge equipment. SUBSTANCE: gear can be used to generate high-frequency capacitive gaseous discharge for various purposes, for instance, for excitation of active media of gas lasers, for spectroscopy of gases and their mixtures, for plasma etching of microcircuits and so on. Proposed gear presents dielectric gas-filled chamber in which or near which at least two pairs of parallel wire electrodes are positioned. Some of them are connected to HF generator and the rest are grounded. As distinct from prototype all electrodes are positioned in row in one plane. Electrodes connected to HF generator alternate with grounded electrodes, electrodes are connected to HF generator in parallel and electrodes connected to ground are also parallel. EFFECT: potential for generation of high-frequency capacitive discharge of large area with high degree of homogeneity. 1 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
DEVICE TO PRODUCE HIGH-FREQUENCY CAPACITANCE GAS DISCHARGE | 2011 |
|
RU2474094C1 |
METHOD AND DEVICE FOR PLASMACHEMICAL TREATMENT OF SUBSTRATES | 2000 |
|
RU2178219C1 |
GAS-DISCHARGE CHAMBER | 2002 |
|
RU2236093C2 |
HIGH-FREQUENCY CAPACITIVE PLASMA GENERATOR | 1993 |
|
RU2027324C1 |
ION PRODUCTION METHOD AND ION SOURCE IMPLEMENTING IT | 1995 |
|
RU2095877C1 |
METHOD OF APPLICATION OF AMORPHOUS SILICON FILMS AND DEVICE FOR REALIZATION OF THIS METHOD | 2000 |
|
RU2188878C2 |
METHOD OF MEDICAL INSTRUMENTS WITH HARD-ALLOY WORKING PARTS PROCESSING | 2024 |
|
RU2840437C1 |
PLASMA GENERATOR | 0 |
|
SU574100A1 |
ION SOURCE | 2020 |
|
RU2749668C1 |
METHOD OF FORMING AMORPHOUS SILICON THIN FILMS | 2016 |
|
RU2650381C1 |
Authors
Dates
2002-08-10—Published
2001-06-27—Filed