READING CIRCUIT FOR FLASH STORAGE WITH MULTILEVEL CELLS Russian patent published in 2002 - IPC

Abstract RU 2190260 C2

FIELD: determination of state of semiconductor storage cell. SUBSTANCE: one option of specified circuit has two comparators and selector circuit. Another option includes comparator and decoding circuit. Formula of invention describes operation of both options of reading circuit. EFFECT: potential for reading storage cells possessing more than two possible states. 4 cl, 9 dwg, 1 tbl

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RU 2 190 260 C2

Authors

Bauer Mark E.

Talredzha Sandzhaj

Fatsio Al'Bert

Atvud Gregori

Dzhavanifard Dzhonni

Frari Kevin V.

Dates

2002-09-27Published

1995-05-18Filed