FIELD: electrical engineering.
SUBSTANCE: technologies for creating access lines in a non-volatile memory device are proposed. In the method, the technology variants comprise the creation of one or more through-holes passing through the matrix in a portion of the memory cell array as part of a non-volatile memory device such as the actual memory cell array region or the peripheral region, so that one or more sampling lines can be inserted through these through holes instead of laying these lines above or below the area of the actual memory cell array or the peripheral region in the memory cell array. This may allow the use of alternative connection configurations and may allow additional access lines to be laid without increasing or substantially increasing the block height in the nonvolatile memory.
EFFECT: nonvolatile memory device using such technologies is proposed.
23 cl, 6 dwg
