FIELD: electronics. SUBSTANCE: invention refers to storages of high degree of integration and process of their manufacture. Proposed storage incorporates storage unit in which charge is recorded through configuration of tunnel junction with profile of energy zone. Profile includes barrier component relatively wide in size with relatively low height of barrier and at least one barrier component relatively narrow in size with relatively great height of barrier. There is also proposed assembly of storages and matrix of storages formed in the form of matrix of storage locations on common substrate. EFFECT: enlarged storage body, reduced dimensions of storage and its raised reliability. 64 cl, 34 dwg, 1 tbl
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