FIELD: memory units. SUBSTANCE: memory register of non-volatile memory unit has control gate, floating gate, drain, source and channel region. The method involves application of first control voltage to control gate, application of second voltage to drain and third to source. Second control voltage is greater than third one. Also method involves control of current between drain and source. When current reaches certain level, programming in first two levels is finished. EFFECT: simultaneous control of threshold levels for two- and multiple-level programming. 18 cl, 5 dwg
