POLYSILICON AND MONOSILICON REACTIVE ION ETCHING PROCESS Russian patent published in 2002 - IPC

Abstract RU 2192690 C2

FIELD: manufacture of highly integrated circuits around bipolar or metal-oxide-semiconductor transistors. SUBSTANCE: essential additional etching is not needed in the process of reactive ion etching of polysilicon up to SiO₂ in plasma of sulfur hexafluoride (SF₆) and oxygen with oxygen content in gas mixture of 25-35 volume percent effected in two steps at different power levels (1.2-1.4 and 0.5-0.7 W/sq. cm) using end-of-up-to-SiO₂ process sensor and in same process for monosilicon. EFFECT: reduced seed requirement for monosilicon; enhanced selectivity of polysilicon etching to photoresist mask. 1 cl, 1 tbl, 2 ex

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RU 2 192 690 C2

Authors

Krasnikov G.Ja.

Jachmenev V.V.

Alekseev N.V.

Klychnikov M.I.

Kolobova L.A.

Dates

2002-11-10—Published

2000-04-06—Filed