HIGH-POWER SEMICONDUCTOR RESISTOR AND ITS MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: manufacture of pelletized silicon resistors including high-temperature ones. SUBSTANCE: resistor has resistor unit in the form of single-crystal n-type silicon incorporating radiation spots whose concentration is from 4•10¹³ cm^-3 for silicon of resistivity ρ_o = 120 Ohm-cm to 2,5•10¹⁴ cm^-3 for that of ρ_o = 20 Ohm-cm. These spots are produced by irradiation with accelerated electrons of 2-5 MeV energy whose dose rate is from 3,4•10¹⁵ cm^-2 for silicon with ρ_o = 120 Ohm-cm to 2•10¹⁶ cm^-2 for that with ρ_o = 20 Ohm-cm. This procedure is followed by thermal stabilization annealing. Proposed resistor is designed for operation at temperatures as high as up to 180 C with its temperature characteristic of resistance maintained within ?10%. EFFECT: increased critical temperature and power rating. 2 cl, 3 dwg, 5 tbl