HIGH-POWER SEMICONDUCTOR RESISTOR AND ITS MANUFACTURING PROCESS Russian patent published in 2003 - IPC

FIELD: manufacture of pelletized silicon resistors and shunts of high temperature stability. SUBSTANCE: high-power semiconductor resistor has resistor unit in the form of disk made of n-type single-crystal silicon incorporating flaws building up deep levels in forbidden gap of silicon; serving as flaws are platinum atoms of ±10% concentration for silicon with source resistivity 1,1•10¹⁴ cm^-3 Ohm-cm to concentration of ρ₀ = 150 for silicon with source resistivity 1,1•10¹⁷ cm^-3 Ohm-cm, these flaws being introduced by diffusion of platinum at temperature of 910 C for n-type silicon with source resistivity ρ₀ = 0,8 Ohm-cm to 1300 C for that with source resistivity ρ₀ = 150 Ohm-cm. Maximum permissible operating temperature for resistor is as high as 240 C with temperature characteristic of resistance maintained within ρ₀ = 0,8. EFFECT: enhanced temperature stability and rated power of resistor. 2 cl, 1 dwg