FIELD: manufacture of semiconductor devices. SUBSTANCE: metal-oxide-semiconductor transistor has semiconductor substrate doped with impurity of first polarity of conductivity, gate insulating layer formed on semiconductor substrate, gate electrodes formed on gate insulating layer, and insulating layer formed by surface oxidation of gate electrode. First wafer is formed on side wall of gate electrodes and second one, on inclined side wall. First layer of low-concentration dope is formed at first depth from impurity of second polarity of conductivity implanted in semiconductor substrate near its surface so that it starts coming to naught at gate electrode edge. Second layer of medium-concentration dope is formed at second depth, that is deeper than first layer, from impurity of second polarity of conductivity implanted in semiconductor substrate near its surface. Third layer of higher-concentration dope formed at third depth encloses second layer of medium-concentration dope and is made from impurity of first polarity of conductivity implanted in semiconductor substrate near its surface so that it starts coming to naught at second wafer edge. EFFECT: enhanced speed and capacity of transistor; eliminated short-channel effect caused by miniaturization. 25 cl, 6 dwg
