FIELD: semiconductor engineering. SUBSTANCE: device has ferroelectric capacitor obtained by means of process given in description of invention; gasket made of low dielectric constant material is formed on surfaces of sides of set of bottom electrodes assembled in separate cellular blocks; ferroelectric film is formed on bottom electrodes whereon there is gasket made of low dielectric constant material; top electrode is formed on ferroelectric film. EFFECT: provision for preventing breakdown between adjacent bottom electrodes. 6 cl, 13 dwg
