OHMIC CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND PROCESS OF ITS MANUFACTURE Russian patent published in 2000 - IPC

FIELD: microelectronics, connection of electrode to semiconductor device of high-integration degree. SUBSTANCE: ohmic contact structure includes transition region on silicon substrate doped with additive, first layer controlling resistance with decreased specific resistance selectively formed on contact window in insulating layer above transition region, second layer controlling resistance formed of germanium and conducting layer forming wire electrode. First layer controlling resistance is formed of material Si_1-X,Ge_X, where 0 <x <1, with output below that of material of substrate and making heterojunction structure. At least one blocking layer is located between second layer controlling resistance and conducting layer. Description gives details of process of manufacture of ohmic contact structure. EFFECT: formation of contact structure with low resistance of semiconductor device with high integration degree which minimizes stress and deformation between metal and semiconductor. 3 cl, 12 dwg, 1 tbl