FIELD: production of synthetic crystals, namely methods for producing zinc oxide crystals designed for using in piezo-technology, acoustic opto-electronics and in other branches of science and technology.
SUBSTANCE: method for growing zinc oxide crystals in hydrothermal condition comprises steps of recrystallization of charge from solution of caustic potash at adding Li+ -ions in sealed vessels of corrosion resistant material onto oriented in parallel to monohedral faces (0001) seed plates cut out of preliminarily grown hydrothermal crystals of zinc oxide; introducing to charge in addition gallium nitride in quantity consisting of 0.01 - 0.5% of charge mass. Presence of nitrogen containing compound in charge causes occurring in zinc oxide at trapping nitrogen ions by lattice hole conductivity, but such trapping is realized only at presence of gallium ions necessary for penetration of nitrogen just to lattice but not in internodes. It provides p-type conductivity of crystals.
EFFECT: possibility for providing desired conductivity of grown crystals of zinc oxide.
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| Title | Year | Author | Number |
|---|---|---|---|
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|
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