METHOD OF GROWING LAYER OF HARD CARBON Russian patent published in 2003 - IPC

FIELD: applied physics; manufacture of microelectronic elements , protective coats of semiconductor devices, infra-red light-sensitive elements and light filters. SUBSTANCE: substrate made from silicon, sitall, glass, lavsan or pobedit is placed on cathode of ion gun and argon ion bombardment is continued for 2 min. Then, argon is replaced with carbon-containing gas, for example, naphthalene or petroleous ester and hydrocarbon-containing plasma is formed. Vacuum of (1÷5)•10^-2 Pa is maintained in chamber. Density of ion flux from ion gun is adjusted within range of 0.15-0.25 mA/ sq cm for naphthalene and 0.25-0.5 mA/ sq cm for petroleous ester. Diamond layer growing on substrate is transparent in infra-red band. Transparence of film thus obtained in infrared band ranges from 2 to 20 mkm. Proposed method does not require preheating of substrate, thus making it possible to use substrates which are not heat-resistant. Atomic density of layer ranges from 160 to 175 atom/sq nm. EFFECT: enhanced efficiency. 3 cl, 1 dwg, 2 tbl, 2 ex