FIELD: technology of production of semiconductor monocrystals of silicon. SUBSTANCE: electromagnetic fields setting melt in motion are utilized to build up supercooling in boundary layer between melt and face of growing crystal. As result heat is removed mainly through melt. Productivity of process with its optimization rises by factor of ten for crystals having diameters 300- 500 mm. EFFECT: raised productivity of process. 3 dwg _
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR GROWING SINGLE CRYSTALS | 1991 |
|
RU2035530C1 |
| METHOD OF PREPARING SILICON MONOCRYSTALS INVOLVING MONOCRYSTAL GROWTH DISRUPTION | 2000 |
|
RU2189407C2 |
| SILICON MONOCRYSTAL PRODUCTION METHOD | 1992 |
|
RU2042749C1 |
| METHOD FOR GROWING GERMANIUM OR SILICON SINGLE CRYSTALS AND A DEVICE FOR ITS IMPLEMENTATION | 2022 |
|
RU2791643C1 |
| METHOD OF GROWING MONOCRYSTALS FROM MELT | 2000 |
|
RU2200775C2 |
| DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTAL | 2008 |
|
RU2361020C1 |
| METHOD OF PRODUCING MONOCRYSTALS OF CALCIUM AND BARIUM FLOURIDES | 2009 |
|
RU2400573C1 |
| MONOCRYSTAL PRODUCING METHOD | 2005 |
|
RU2293146C2 |
| METHOD FOR GROWING OF SAPPHIRE SINGLE CRYSTALS FROM MELT | 2006 |
|
RU2350699C2 |
| TECHNIQUE OF FURNACE FEED ADDITIONAL CHARGING DURING PROCESS OF SILICON SINGLE CRYSTAL GROWING BY CZOCHRALSKI METHOD | 2007 |
|
RU2343234C1 |
