FIELD: technology of production of semiconductor monocrystals of silicon. SUBSTANCE: electromagnetic fields setting melt in motion are utilized to build up supercooling in boundary layer between melt and face of growing crystal. As result heat is removed mainly through melt. Productivity of process with its optimization rises by factor of ten for crystals having diameters 300- 500 mm. EFFECT: raised productivity of process. 3 dwg _
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