HIGH-POWER SEMICONDUCTOR RESISTOR AND METHOD OF MAKING SAID RESISTOR Russian patent published in 2014 - IPC H01C7/06 

FIELD: physics.

SUBSTANCE: group of inventions relates to the design and technology of producing semiconductor devices. A resistive element provides content of platinum atoms, selected as an impurity which creates deep trapping levels in a silicon band gap, with concentration ranging from 2.5·10¹³ cm^-3 for silicon with p-type conductivity with initial resistivity ρ_p0=150 ohm·cm to 9·10¹⁴ cm^-3 for silicon with p-type conductivity with ρ_p0=0.4 ohm·cm, and the disclosed method of making a high-power semiconductor resistor includes diffusion of platinum atoms at temperature ranging from 870°C for silicon with p-type conductivity with initial resistivity ρ_p0=150 ohm·cm to 1190°C for silicon with p-type conductivity with ρ_p0=0.4 ohm·cm.

EFFECT: providing high temperature stability of resistance, increasing the maximum allowable temperature of the resistor (to +260°C) and the operating pulsed voltage 2-2,5 times (to 5000 V).

2 cl, 2 dwg, 3 tbl