POWER SEMICONDUCTOR SHUNT RESISTOR AND METHOD OF MAKING SAID RESISTOR Russian patent published in 2010 - IPC H01L29/30 H01L21/263 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to design and technology of making power semiconductor devices and can be used in making pellet power silicon resistors, particularly shunt resistors characterised by low rated resistance value of (0.2-1) mΩ with low resistance temperature dependency in the operating temperature range. The power semiconductor resistor consists of a resistive element made in form of a silicon disc with n-type conductivity with initial resistivity ranging from 7 Ω·cm to 120 Ω·cm, which has radiation defects, the resistive element consists of a heavily doped n⁺-substrate and a thin high-resistance epitaxial n-type layer, where the radiation defects have concentration N_pd [cm^-3] depending on the initial resistivity of the high-resistance epitaxial layer ρ_n0 [Ω·cm] ranging from 4·10¹³ cm^-3 for ρ_n0=120 Ω·cm to 7.5-10¹⁴ cm^-3 for ρ_n0=7 Ω·cm. The radiation defects result from exposure to accelerated electrons with energy E=2-5 MeV with subsequent thermal annealing.

EFFECT: wider interval of rated resistance in the region of low values (≤5 mΩ) with retention of thermal stability and manufacturing cost and, consequently, wider functional capabilities of power silicon resistors - their use as shunts.

2 cl, 2 dwg, 4 tbl, 1 ex