METHOD OF MAKING SEMICONDUCTOR POWER RESISTOR Russian patent published in 2012 - IPC H01L21/263 

FIELD: physics.

SUBSTANCE: in a method, which involves formation of diffusion near-contact zones in a silicon resistive element with metal contacts to said zones, introducing radiation defects into the resistive element through irradiation with accelerated electrons and subsequent heat-stabilising annealing, irradiation with accelerated electrons is carried out in two steps, where the first irradiation step is carried out with dose (F₁) which increases resistivity of silicon to the required value through subsequent thermal annealing which is carried out at temperature 470-480°C for 2-3 hours, and the second irradiation step is carried out with dose (F₂), which minimises the temperature characteristic of the required resistivity through heat-stabilising annealing. The invention discloses relationships for determining the radiation dose (F₁ and F₂) with known electron radiation dose (F₀) for minimising the temperature characteristic of the initial resistivity of silicon (ρ₀).

EFFECT: high reliability, reduced weight and size and cost parameters of devices with said resistors, reduced cost and duration of making silicon resistors.

2 cl, 5 dwg, 2 tbl