METHOD FOR PRODUCING HIGH-POWER AND HIGH-TEMPERATURE SEMICONDUCTOR RESISTOR Russian patent published in 2006 - IPC H01L21/263 

FIELD: semiconductor devices including high-power and high-temperature silicon resistors.

SUBSTANCE: proposed method for manufacturing high-power and high-temperature semiconductor resistor characterized in high temperature stability of resistance within wide operating temperature range at temperature characteristic of resistance kept within ±10% includes generation of near-contact diffusion regions in silicon resistance unit and metal contacts to them, introduction of radiation defects in resistance unit by irradiating with accelerated electrons of E = 2-5 MeV energy, followed by thermal annealing. Irradiation by accelerated electrons is conducted at dose rate ranging between 1.1 x 10¹⁵ cm^-2 for silicon having source resistivity ρ₀ = 120 Ohm-cm and 2.1 x 10¹⁶ cm^-2 for silicon having source resistivity ρ₀ = 7 Ohm-cm; thermal annealing is conducted within temperature range of 260 to 280 °C.

EFFECT: enhanced maximal admissible temperature and rating, reduced manufacturing cost of resistor.

1 cl, 1 dwg, 5 tbl