FIELD: physics; semiconductors.
SUBSTANCE: invention relates to semiconductor devices and can be used in designing high-voltage semiconductor resistors with given relationship of their resistance to applied voltage. The resistive element of a high-voltage semiconductor resistor is made from a monocrystalline semiconductor with given type of conductivity, in which there are near-contact zones, ohmic contacts and there is protection of the peripheral contour from surface breakdown. Thickness of the resistive element (L3) is determined using defined ratios.
EFFECT: design of resistive elements of high-voltage semiconductor resistors in which relative variation of resistance (dRu), when applied voltage varies within a given range does not exceed a given value dRu3).
1 tbl
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