FIELD: microelectronics; manufacture of integrated-circuit structures. SUBSTANCE: method for producing integrated-circuit structures of 100 mm in diameter includes connection of two silicon plates by means of boron-silicate joints synthesized in homogeneous (gaseous) medium of following composition: silicon dioxide produced by plasma-chemical method from (0.77 T - 14.22) to (0.077 T + 7.4); boron oxide from (100 - (0.077 T + 7.4) to (100 - (0.077 T - 14.22), except for following values: silicon dioxide obtained by plasma-chemical method (0.077 T - 14.216); boron oxide (100 - (0.077 T - 14.216), where T is heat treatment temperature, C; heat treatment is conducted in homogeneous gaseous medium at synthesis temperature of boron-silicate compounds. EFFECT: reduced cost of structures. 1 cl, 4 dwg
