FIELD: microelectronics; production of integrated-circuit structures. SUBSTANCE: method involves connection of two silicon wafers by means of borosilicate system compounds using synthesis in homogeneous (gas) medium, composition of components being as follows: silicon dioxide produced by plasma-chemical method, from 0.077 T-14.3 to 0.77 T-38; boron oxide, from [100-(0.77 T-14.3)] to [100- (0.77 T-38)], where T is heat treatment temperature, C; heat treatment is conducted in homogeneous gas medium at temperature of borosilicate synthesis and gas medium speed of (0-83)×10-5 cu.m/s. In this way structures of 100 mm in diameter can be obtained. EFFECT: reduced cost and size of structure. 4 dwg
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