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2 022 405

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IPC

(21) (22)

Application

5046022/25, 1992-06-04

(22)

Actual filing date

1992-06-04

(45)

Published

1994-10-30

(72)

Inventor

Serousov Igor' Jur'Evich

(73)

Holder

Serousov Igor' Jur'Evich

METHOD FOR PRODUCING STRUCTURES FOR INTEGRATED CIRCUITS WITH DIELECTRIC INSULATION Russian patent published in 1994 - IPC

Abstract RU 2022405 C1

FIELD: manufacture of integrated circuits with insulated components. SUBSTANCE: silicon substrates are joined together; joining layer incorporates polycrystal silicon, silicon dioxide layer, borosilicate system compositions obtained by synthesis from boron oxide solution in organic medium. Structure is subjected to heat treatment in oxygen medium in three stages: degassing, dewatering at 320-410 C, and formation of crystallization centers at 850-995 C followed by synthesis of joining layer at 1170-1220 C. EFFECT: facilitated procedure. 4 dwg

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RU 2 022 405 C1

Authors

Serousov Igor' Jur'Evich

Dates

1994-10-30—Published

1992-06-04—Filed

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