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2 022 404

(13)

C1

(51)

IPC

(21) (22)

Application

5046015/25, 1992-06-04

(22)

Actual filing date

1992-06-04

(45)

Published

1994-10-30

(72)

Inventor

Serousov Igor' Jur'Evich

(73)

Holder

Serousov Igor' Jur'Evich

METHOD FOR PRODUCTION OF INTEGRATED-CIRCUIT STRUCTURES WITH DIELECTRIC INSULATION OF PARTS Russian patent published in 1994 - IPC

Abstract RU 2022404 C1

FIELD: integrated circuit manufacturing technique. SUBSTANCE: method involves connection of two silicon plates using contact layer of following composition, mol percent: silicon dioxide obtained by chemicoplasma method - 0.077T-14.216; boron oxide - the rest up to 100%, where T is borosilicate compound synthesis temperature. Heat treatment is conducted in homogeneous gaseous medium. EFFECT: facilitated procedure. 4 dwg

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RU 2 022 404 C1

Authors

Serousov Igor' Jur'Evich

Dates

1994-10-30—Published

1992-06-04—Filed

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