FIELD: microelectronics. SUBSTANCE: method involves mechanical treatment of silicon substrates, formation of pattern with cavities, buried layer, silicon dioxide layer, and monocrystal silicon layer of thickness 11-14% greater than depth of pattern on monocrystal substrate surface. Silicon dioxide layer is applied to polycrystal silicon layer and to pattern-free substrate, and this layer is covered with junction layer whose thickness makes up 40-56% of pattern depth; composition of this layer is as follows, mass percent: silicon dioxide powder obtained by plasma-chemical synthesis- 1.4-1.5; boron oxide - 1.4-1.5; isopropyl alcohol - 68-69.2; deionized water - 28-29. Upon application of junction layer substrates are joined together, subjected to heat treatment, and monocrystal areas of silicon are opened. EFFECT: facilitated procedure. 4 dwg
