METHOD AND APPARATUS FOR PRODUCING SILICON MONOXIDE Russian patent published in 2003 - IPC

FIELD: electronic equipment. SUBSTANCE: method involves producing silicon monoxide by reducing silicon dioxide by silicon through reaction of SiO₂+Si = 2SiO in shielding atmosphere; carrying out reduction process at temperature of 2,200-3,000 K; introducing finely dispersed powder mixture into melt of one reactants, namely, silicon dioxide or silicon. Apparatus has heating member located above reaction chamber, dosing device and quenching device. Electric arc argon plasmotron is used as heating member. Anode is positioned in lower part of reaction chamber for displacement in vertical plane to set arc length required for heating finely dispersed powder mixture of silicon dioxide and silicon. Crucible for reactants is located inside reaction chamber. Crucible is manufactured from thermally stable material. Silicon monoxide produced by method is used as dielectric and insulating material for manufacture of condensers, triodes, and other microfilm elements. EFFECT: increased efficiency of apparatus and provision for reduced content of contaminants in silicon monoxide. 3 cl, 2 dwg