HEAVY-POWER LIGHT-EMITTING DIODE Russian patent published in 2005 - IPC

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (A^IIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides Al_xIn_yGa_{1 - (x + y)}N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running.

EFFECT: enhanced output optical power and efficiency of light-emitting diode.

3 cl, 3 dwg