METHOD FOR PRODUCING THIN-FILM SEMICONDUCTOR DEVICES AROUND ORGANIC COMPOUNDS Russian patent published in 2003 - IPC

Abstract RU 2214651 C2

FIELD: semiconductor technology. SUBSTANCE: thin-film material produced by proposed method has electrode assembly whose electrodes possessing best properties of charge injection and high conductivity with structuring line width about 1 mcm contact semiconducting organic material; anode in electrode assembly is made as double-layer structure whose first layer is conducting or semiconducting material, or combination thereof, deposited onto substrate, and second layer is conducting polymer whose work function is higher than that of first-layer material. Third layer composed of organic semiconducting material forms active material of device that covers anode; cathode is made of fourth layer of material applied to third layer. Best alternative of producing such device is use of metal having low work function in first layer, doped conjugated sheet polymer such as PEDOT-PSS, in second layer, and cathode can be built of metal similar to that used in first layer. Proposed method is used for producing electrode assembly in thin-film diode built around organic compounds or in transistor structure. EFFECT: enhanced electrode quality. 16 cl, 15 dwg

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RU 2 214 651 C2

Authors

Roman Lusimara Shtol'Ts

Inganes Olle

Khagel' Olle

Berggren Magnus

Gustafsson Jeran

Karl'Sson Jokhan

Dates

2003-10-20Published

2000-04-14Filed