FIELD: instrument making.
SUBSTANCE: flash memory element for electrically programmable read-only memory is intended for storage of information when power supply is switched off. On semiconductor substrate with source and drain between latter there is a tunnel layer, an additional tunnel layer, a memory layer, a blocking layer and a gate. Additional tunnel and blocking layer are made from material with high permittivity, from 5 to 2,000 exceeding permittivity of material of tunnel layer made of SiO2. Memory layer is made in form of graphene.
EFFECT: prolonged storage of charge, increased memory window to 7 V, possibility of injection of positive and negative charge, reduced time for recording/deleting information, prolonging information storage time to 12 years.
6 cl, 4 dwg
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