FIELD: physics.
SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600°C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm.
EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses.
4 cl, 4 dwg
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