METHOD FOR PRODUCING SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2003 - IPC

FIELD: semiconductor engineering; manufacture of modern materials for microelectronics. SUBSTANCE: method for producing silicon-on-insulator structures used in manufacture of very large-scale integrated circuits includes hydrogen implantation in silicon wafer, chemical treatment of silicon wafer and substrate, jointing of silicon wafer and substrate, their splicing and splitting along implanted layer of wafer; wafer and substrate surfaces are dried out after chemical treatment and cleaned of physically adsorbed materials then wafer and substrate are joined together, spliced, and split along implanted layer of wafer in single stage at low vacuum and at temperature required to hold implanted hydrogen within silicon in bound state. EFFECT: improved quality of structure. 9 cl, 4 dwg