METHOD OF MAKING SILICON-ON-INSULATOR STRUCTURES Russian patent published in 2010 - IPC H01L21/324 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to semiconductor engineering and can be used for making device structures. In the method of making silicon-on-insulator structures, an amorphous layer of SiO₂ dielectric is formed on a Si substrate and impurities of reactive gases with low solubility in SiO₂ are implanted in the layer, forming molecules which easily diffuse to the surface. The substrate is then annealed in an oxidative atmosphere. During annealing, complexes are formed from gas molecules of the implanted impurities and oxygen, where the said complexes interact with atoms on the SiO₂ surface, with modification of the surface due to saturation of the broken bonds of atoms and formation of brand new bonds more than the initial number, which interact with OH complexes with hydrophilisation. In the silicon donor-substrate, a weakened zone is created through ion implantation, where the said zone separates the silicon layer transferred to the substrate. The donor-substrate and the substrate undergo cleaning and hydrophilisation. Further, the substrate and the donor-substrate are joined in pairs. Joining and simultaneous layering are carried out on the weakened zone to form a cut off surface layer of silicon on the substrate.

EFFECT: due to formation of brand new bonds on the surface of the SiO₂, where the new bonds are more than the initial bonds, the quality of the structure is improved and the need for initial mechanical treatment of silicon wafers is reduced.

11 cl, 3 dwg, 9 ex