METHOD OF MANUFACTURING SILICON-ON-SAPPHIRE STRUCTURE Russian patent published in 2015 - IPC H01L21/762 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention relates to semiconductor technology and can be used for manufacturing device structures. Implantation of ions is performed into silicon substrate with formation of layer, intended for transfer. Activating processing of surface, on which splicing is carried out, is realised. Silicon and sapphire substrates are joined in pairs with surfaces, intended for splicing. They are preliminarily given the temperature, corresponding to the state of their materials, conditioned by thermal expansion, which guarantees absence of destruction causing internal mechanical tensions when they are joined in pairs and then subjected to thermal impact. Splicing of surfaces of silicon substrate and sapphire substrate with each other are layering are performed, realising transfer of silicon layer on sapphire substrate and obtaining structure.

EFFECT: due to preliminary, before joining into pairs, heating of substrates to temperatures 200-400°C increased resistance of silicon-on sapphire structure to mechanical destruction in case of heating/cooling, reduction of concentration of defects in silicon are achieved.

11 cl, 4 dwg