PHOTOELECTRIC CELL, HAVING HIGH CONVERSION EFFICIENCY Russian patent published in 2014 - IPC H01L31/72 

FIELD: physics.

SUBSTANCE: invention primarily relates to photoelectric cells and specifically to photoelectric cells for solar radiation (solar cells). The photoelectric cell according to the invention comprises at least one junction (120, 124); wherein said at least one junction includes a base (120) formed by epitaxial doped semiconductor material of first conductivity type, and an emitter (124) formed by doped semiconductor material of second conductivity type, which is opposite to the first type. Said emitter is deposited on the base in accordance with a first direction (x) and the base of said at least one junction has a falling impurity concentration gradient (C(x)) along said first direction. Said base has a first part at a distance from the emitter, a second part in the immediate vicinity of the emitter and a third part between the first part and the second part. In the first part, said falling impurity concentration gradient has an inclination whose average value substantially lies in the range from -9·10¹⁷cm^-3/mcm to -4·10¹⁷ cm^-3/mcm. In the second part, said falling impurity concentration gradient has an inclination whose average value substantially lies in the range from -3·10¹⁷cm^-3/mcm to -9·10¹⁶ cm^-3/mcm. In the third part, said falling impurity concentration gradient has an inclination whose average value substantially lies in the range from -2·10¹⁷cm^-3/mcm to -5·10¹⁶ cm^-3/mcm. Also disclosed is a method of making the photoelectric cell described above.

EFFECT: invention enables to produce photoelectric cells of high efficiency.

14 cl, 5 dwg