HIGH-POWER MICROWAVE TRANSISTOR Russian patent published in 2004 - IPC

FIELD: semiconductor engineering. SUBSTANCE: total area of depressions in contact pad metallization of high-power microwave transistor and of base zones of each transistor module designed for reducing stray capacitance of pads is increased with increase in inductance of its output circuit. Additional condition for proportion of total area and length of depressions provides for variation of capacitances of metallization pads by varying length of depressions with their shape maintained constant. Provision is made to compensate for difference in capacitances of output circuits. EFFECT: reduced nonuniformity of output-circuit resonant frequencies in separate transistor cells; enhanced power gain of transistor. 1 cl, 3 dwg